Transistors

Darlington Transistor Selection Guide

In electronics, the Darlington configuration is a compound structure of a particular design made by two bipolar transistors connected in such a way that the current amplified by the first transistor is amplified further by the second one. This configuration gives a much higher current gain than each transistor taken separately. Invented in 1953 by Sidney Darlington.

(Listed in Order of Case Style descending Voltage, *TC = +25°C)

NTE Type No.		Maximum Continuous Collector Current (Amps)	Maximum Breakdown Voltage			Maximum Continuous Base Current (mA)	Typical Forward Current Gain	Maximum Collector Power Dissipation (Watts)	Case Style (hover over image for larger view)
NPN	PNP	Maximum Continuous Collector Current (Amps)	Collector to Base (Volts)	Collector to Emitter (Volts)	Emitter to Base (Volts)	Maximum Continuous Base Current (mA)	Typical Forward Current Gain	Maximum Collector Power Dissipation (Watts)	Case Style (hover over image for larger view)
		I_C	BV_CBO	BV_CEO	BV_EBO	I_B	h_FE	P_D
98	-	20	700 (CEV)	500	8	2500	40 Min	175 *	TO3 TO3
99	-	50	600	400	8	10000	25 Min	250
97	-	10	500	400	8	2500	40 Min	150
2649	2650	15	200	200	5	1A	5000 Min	130 *
2349	2350	50	120	120	5	2A	2000 Min	300
2541	2542	25	120	120 (CER)	6	2A	2000 Min	120 *
247	248	12	100	100	5	200	750 Min	150 *
249	250	16	100	100	5	500	4000	150
251	252	20	100	100	5	500	2500	160
243	244	8	80	80	5	120	2500	100
245	246	10	80	80	5	200	4000	150
2335	-	5	60±15	60±15	6	-	2000 Min	80
215	-	8	110	100	6	-	4000	60	TO3P TO3P
214	-	10	70	60	6	-	5000	2.5	TO3P TO3P
2682	2683	8	160	160	5	-	3500 Min	150 *	TO3PL TO3PL
2558	-	15	1500	800	5	3A	25 Min	250 *	TO3PBL TO3PBL
2685	2686	8	160	150	5	1A	5000 Min	75 *	TO3PML TO3PML
2559	2560	16	120	120	6	1A	2000 Min	75 *	TO3PML TO3PML
270	271	10	100	100	5	500	1000 Min	125	TO3PN TO3PN
274	275	4	80	80	5	80	3000	50	TO66 TO66
272	-	2	50	40	12	-	25000 Min	10 *	TO202 TO202
265	-	0.5	50 (CES)	50	13	75	10000 Min	6.25 *	TO202 TO202
256	-	28	600	400	10	6A	30 Min	150	TO218 TO218
2317	-	15	500	450	5	1A	300 Min	105 *	TO218 TO218
2638	-	7	400	400	6	1.5A	150 Min	80 *	TO220 TO220
2315	-	8	400	200	6	2A	125	60
2343	2344	12	120	120	5	200	1000 Min	80
261	262	8	100	100	5	120	1000 Min	65
263	264	10	100	100	5	250	1000 Min	65
2545	2546	5	70	60	5	-	2000 Min	30 *
2332	-	2	60±10	60±10	6	2	4000	20
2334	-	5	60±10	60±10	6	500	4000	40
266	-	0.5	50	50	13	-	40000 Min	6.25
268	269	2	50	50	13	100	1000 Min	10
267	-	0.5	30	30	13	-	90000 Min	6.25
2550	-	10	500	400	12	0.5	150 Min	50 *
2540	-	6	600	400	5	1A	600 Min	25 *	TO220 (full pack) TO220 (full pack)
2543	-	6	300	250 (CER)	20	6A	2000 Min	40 *
2553	-	12	300	200	6	1A	500 Min	30 *
2547	2548	8	110	100	6	-	4000	30 * / 20 *
2551	2552	10	70	60	6	-	5000	30 *
2693	2694	6	110	110	5	1A	5000 Min	30 *
2557	-	15	200	200	7	1A	1500 Min	100 *	TO247 TO247
-	17	0.5	100	100	12	-	10000	0.625	TO92 TO92
46	-	0.5	100	100	12	-	10000	0.625
2341	2342	1	100	80	7	100	2000 Min	1
172A	-	0.3	40	40	12	50	7000 Min	0.4
48	-	1	60	50 (CES)	12	-	25000 Min	1	TO92 (giant) TO92 (giant)
2644	-	2	60±10	60±1	8	500	2000 Min	0.9	TO92 (giant) TO92 (giant)
2544	-	1.5	120	120	6	-	1000 Min	10 *	TO126 TO126
253	254	4	100	100	5	100	2000	40 *
2554	2555	7	70	60	6	-	1500 Min	40 *
2345	2346	6	120	120	5	150	750 Min	60	SOT-82 SOT-82
2404	2405	0.3	40	30	10	100	4000 Min	0.350	SOT-23 SOT-23
2426	2427	0.5	90	80 (CER)	5	100	2000 Min	1	SOT-89 SOT-89
2340	-	8	60±10	60±10	7	-	2000 Min	45	N Pack N Pack
2351	2352	4	100	80	5	0.4	1000 Min	1	N Pack N Pack
2556	-	8	110	100	6	-	1500 Min	40 *	Silicon NPN Transistor

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Transistors

Darlington Transistor Selection Guide