3-Layer Bilateral Trigger Diodes (DIAC) Refresh

Thyristors

Silicon 3-Layer Bilateral Trigger Diodes (DIAC)

NTE Type Number	Breakover Voltage (Forward & Reverse) (Volts)	Maximum Breakover Current (µA)	Maximum Peak Pulse (Amps)	Minimum Switching Voltage Change (Both Directions) (Volts)	DO7 / DO35 Maximum Power Dissipation (mW)
	V_BO	I_(BR)1 & I_(BR)2	I_Pulse	ΔV	P_D
6407	28 ± 4	100	2	6	250
6408	32 ± 4	100	2	6	250
6411	40 ± 4	100	2	6	250
6412	63 ± 4	100	2	6	250

DESCRIPTION: The NTE6407, NTE6408, NTE6411, and NTE6412 bilateral trigger DIACs offer a range of voltage characteristics from 28 to 63 volts.

The DIAC semiconductor is a full-wave or bidirectional thyristor. It is triggered from a blocking-to-conduction state for either polarity of applied voltage exceeding the breakover voltage rating of the DIAC.

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Thyristors

Silicon 3-Layer Bilateral Trigger Diodes (DIAC)