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Worldwide supplier of high quality electrical / electronic components

Call Us: +800-631-1250

Optoelectronic Devices

Infrared Detector Diodes

NTE Type Number	Description	Package Type	Reverse Voltage (Volts)	Maximum Dark Current (nA)	Minimum Light Current (µA)	Power Dissipation (mW)	Rise Time (ns)	Typical Detection Angle (°)	Typical Peak Emission Wavelength (nm)
			V_R	I_D	I_L	P_D	t_r
3033	Infrared Pin Photodiode	Sideviewer	35	30	24	150	50	70	940
30049	Infrared Photodiode		33	30	20	150	45	120	900
30050	Infrared Photodiode		33	30	17	150	45	140	900

Phototransistor Detectors - Includes Infrared Types

NTE Type No.	Description	Collector to Base Voltage (Volts)	Maximum Collector Current (mA)	Maximum Collector Dark Current at +25°C (nA)	Minimum Light Current (mA)	Maximum Power Dissipation at +25°C (mW)	Typical Response Time (µs)	Package
		V_(BR)CBO	I_C	I_D	L_L	P_D
3031	NPN, Si, Visible and IR	30 (V_CEO)	40	100 @ 10V V_CE	1.0	150	6	TO46 Flat Lens
3032	NPN, Si, Visible and IR	80	40	20 @ 5V V_CE	12	200	2	TO46 Dome Lens
3034A	NPN, Si, Photo/Light Detector	30 (V_CEO)	50	50 @ 20V V_CE	-	100	-	Sidelooker
3036	NPN, Si, Darlington Visible & Near IR	50	250	100	12	250	151	TO18 Dome Lens
3037	NPN, Si, Visible and IR	50	50	200 @ 30V V_CE	60µA @ 3V	150	2	TO18 Dome Lens
3039	NPN, Si, Visible and IR	30	-	100 @ 15V V_CE	7µA @ 5V	70	-	3mm (T1) clear
3120A	NPN, Si, Phototransistor	30 (V_CEO)	50	1µA @ 20V V_CE	-	100	10	Sidelooker
3122	NPN, Si, Darlington, IR, Visible Cut-Off, Narrow Acceptance	35 (V_CEO)	50	10µA @ 10V V_CE	1.5	75	80
3123	NPN, Si, Darlington, IR, Visible Cut-Off	35 (V_CEO)	50	10µA @ 10V V_CE	0.2	75	400
30051	NPN, Si, Phototransistor	30 (V_CEO)	1.5 Typ	30	-	150	15	-
30052	NPN, Si, Phototransistor	30 (V_CEO)	12	30	-	150	15	-
30133	NPN, Si, IR Phototransistor (use with NTE30132)	30 (V_CEO)	20	100	-	75	15	1.9mm Dome Lens

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